Initial stage of MBE-epitaxy processes of InN on c-plane GaN template and successful p-type doping were studied. It was found that InN epitaxy proceeds through SK-mode and 1-ML-thick InN can be coherently grown on GaN. Successful p-type doping of InN was achieved by Mg doping levels from 1018 to about 3×1019 cm-3. Overdoped Mg's introduced new donors in InN resulting in n-type conduction. Novel structure InN-based QWs consisting of coherent 1-ML-thick InN wells embedded in GaN matrix were proposed and fabricated. It was confirmed that extremely fine structure InN QWs with quite sharp and flat hetero-interface were fabricated by self-limiting growth mode under In-polarity growth regime at remarkably higher growth temperatures up to 650 °C. © 2008 Elsevier B.V. All rights reserved.
Yoshikawa, A., Che, S., Ishitani, Y., & Wang, X. (2009). Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs. Journal of Crystal Growth, 311(7), 2073–2079. https://doi.org/10.1016/j.jcrysgro.2008.12.016