As the most potential next-generation display technology, SED(Surface-conduction Electron-emitter Display) whose independent electron emission character and good image quality draw much attention. Because of the higher emission efficiency than ZnO or PdO in the same craftwork, W-Si-N was selected as electron emitter material applied in SED. In this work, we developed SED with W-Si-N electron emitter film through magnetron sputtering and photoetching technology. We have found that W-Si-N thin film has high luminescent performance. WN and Si3N4 were found in W-Si-N film according to the results of XRD (X-Ray Diffraction) and XPS (X-ray photoelectron spectroscopy). Moreover, the obvious negative resistance effect based on the electron tunneling was observed in the nano-gap formulating process. Crystal boundary, defects, and impure particle affect electron emission efficiency. Besides, we have investigated the fabricating parameters, crystal structure and electron emitting characteristics and obtained the highest emission efficiency∼4.3%.
Shi, Y., Li, Y., Song, Z., Xiong, S., & Liu, C. (2012). W-Si-N Nan-Crystal as Electron Emitter Applied in SED. In Physics Procedia (Vol. 32, pp. 389–394). Elsevier B.V. https://doi.org/10.1016/j.phpro.2012.03.573