Amorphous thin GeSbTe phase-change films prepared by radical-assisted metal-organic chemical vapor deposition

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Abstract

Amorphous thin Ge2Sb2Te5 filmswere deposited byMOCVD (metal organic chemical vapor deposition) on threedimensional structures. Ammoniumgas, used as a reactant, reduced the deposition temperature to 150 °C,which is lower than that ofmetal-organic precursors. Introducing nitrogen and hydrogen radicalsmade by decomposition of the ammoniumgas further reduced the growth temperature. The lowest growth temperature producing a realistic growth rate was 100 °C. Phase-change memory cells made of MOCVD-grown films were confirmed to have operation and reliability characteristics as good as those of conventional cells made of sputter-deposited films.

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Fujisaki, Y., Sasago, Y., & Kobayashi, T. (2015). Amorphous thin GeSbTe phase-change films prepared by radical-assisted metal-organic chemical vapor deposition. Thin Solid Films, 583(1), 55–59. https://doi.org/10.1016/j.tsf.2015.03.034

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