Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing

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Metal-Nb2O5−x-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect density is inherent to the Nb2O5−x deposition rather than post-fabrication treatments. Temperature dependent measurements reveal that the dominant trap energy is 0.22 eV suggesting it results from the oxygen deficiencies in the amorphous Nb2O5−x. Rectification occurs due to a transition from thermionic emission to tunneling current and is present even in thick devices (>100 nm) due to charge trapping which controls the tunneling distance. The turn-on voltage is linearly proportional to the Schottky barrier height and, in contrast to traditional metal-insulator-metal diodes, is logarithmically proportional to the device thickness. Hysteresis in the I–V curve occurs due to the current limited filling of traps.




Shank, J. C., Tellekamp, M. B., Wahila, M. J., Howard, S., Weidenbach, A. S., Zivasatienraj, B., … Doolittle, W. A. (2018). Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing. Scientific Reports, 8(1).

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