Writing and reading magnetization states via strain in Fe3GaTe2/h-BN/MnBi2Te4 junction

Abstract

Writing and reading of magnetization states via mechanical strain are crucial for the development of ultralow-power spintronic devices. In this study, a van der Waals magnetic tunnel junction (vdW MTJ) of Fe3GaTe2/h-BN/MnBi2Te4 is constructed to explore the magnetization reversal under in-plane biaxial strains. Interestingly, the interlayer magnetic coupling of devices can be tuned to ferromagnetic and antiferromagnetic states by tensile and compressive strains, respectively. The various magnetic couplings on applied strains are analyzed using the superexchange theory. Importantly, the interlayer coupling nearly vanishes after removing external strains, ensuring the nonvolatility of magnetization reversal, resulting in the nonvolatile writing of magnetization states in the present vdW MTJ. Moreover, the tunneling magnetoresistance ratio of the device is up to −5745%, which remains −1478% even with −2% strain, showing great potential for reading the magnetization states. Therefore, this work provides an alternate avenue to write and read magnetization states in one vdW MTJ under biaxial strains.