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Temperature-dependent electrical transport characteristics of p-SnS/n-WO3:Sb heterojunction diode

IOP Conference Series: Materials Science and Engineering (2018) 383(1)
DOI: 10.1088/1757-899X/383/1/012006
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Abstract

The p-SnS/n-WO3:Sb heterojunction diode was successfully obtained by thermal evaporating SnS thin films on WO3 doped with 2.0 mol% Sb2O3 of 1 mm thick ceramic pellet substrate. The electrical properties of p-SnS/n-WO3:Sb heterojunction were investigated by forward current-voltage-temperature (I-V-T) characteristics in the temperature range of 20-300 K. It was found that at low forward bias voltage (<0.25V), the conduction mechanism of the diode exhibits Ohmic conduction. At intermediate voltage (0.25

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Gaewdang, T., & Wongcharoen, N. (2018). Temperature-dependent electrical transport characteristics of p-SnS/n-WO3:Sb heterojunction diode. In IOP Conference Series: Materials Science and Engineering (Vol. 383). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/383/1/012006

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