Electromechanical fields in GaN/AlN wurtzite quantum dots

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Abstract

We show that the governing equations for the electromechanical fields of wurtzite structures are axisymmetric, hence all electric- and mechanical-field solutions are axisymmetric as well and the original three-dimensional problem can be solved as a two-dimensional mathematical-model problem [1]. We present results of the combined influence of lattice mismatch, piezoelectric effects, and spontaneous polarization for wurtzite (WZ) structures consisting of a GaN quantum dot embedded in a AlN matrix. © 2008 IOP Publishing Ltd.

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Barettin, D., Lassen, B., & Willatzen, M. (2008). Electromechanical fields in GaN/AlN wurtzite quantum dots. Journal of Physics: Conference Series, 107(1). https://doi.org/10.1088/1742-6596/107/1/012001

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