Low-threshold nanolasers based on slab-nanocrystals of H-aggregated organic semiconductors

Abstract

Low-threshold nanolasers based on slab nanocrystals (SNCs) of highly emissive H-aggregated organic semiconductors are reported. A lasing threshold as low as 100 nJ cm-2 is achieved in a high-quality (cavity quality factor â1000) Fabry-Pérot cavity constituted by the two lateral-faces of SNCs at the wavelength scale. Moreover, the laser light generated in the ultrasmall radial cavity of SNCs can propagate along its length up to hundreds of micrometers, making them attractive building blocks for miniaturized photonic circuits. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.