From Memory Traces to Surface Chemistry: Decoding REDOX Reactions

6Citations
Citations of this article
6Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nanoscaled, cost-effective, and environmentally sustainable sensor solutions. These sensors encode readouts in resistance state changes based on gas concentration, yet their nonlinear current-voltage characteristics offer richer dynamics, capturing detailed information about REDOX reactions and surface kinetics. Traditional vertical devices fail to fully exploit this complexity. This study demonstrates planar resistive switching devices, moving beyond the Butler-Volmer model. A systematic investigation of the electrochemical processes in Na-doped ZnO with lateral planar contacts reveals intricate patterns resulting from REDOX reactions on the device surface. When combined with advanced algorithms for pattern recognition, these allow the analysis of complex switching patterns, including crossings, loop directions, and resistance values, providing unprecedented insights for next-generation complex sensors.

Cite

CITATION STYLE

APA

Costa Silva, A. L., Silva, R. S. W., Moisés, L. A., Chiquito, A. J., Godoy, M. P. F. de, Hartmann, F., & Lopez-Richard, V. (2025). From Memory Traces to Surface Chemistry: Decoding REDOX Reactions. ACS Applied Electronic Materials, 7(4), 1439–1447. https://doi.org/10.1021/acsaelm.4c01977

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free