SAME-Infer: Software Assisted Memory Resilience for Efficient Inference at the Edge

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Abstract

Design of edge devices is driven by the need for the lowest possible cost and energy consumption. Both of these are strongly affected by on-chip memories as they often constitute a large fraction of embedded processors. One way to reduce energy consumption is by reducing the supply voltage. However, this causes memory cell hard fault rates to rise exponentially, thus degrading yield at low voltage and increasing cost. Also the weaker memory cells often lead to worsened chip yield and mean-time-to-failure. Deep learning neural network applications constitute a significant fraction of the workloads that are run today on these low cost embedded devices. Despite the inherent resilience of most of these deep learning applications, inference accuracy degrades significantly at high fault rates. We propose SAME-Infer, a software assisted memory resilience technique for efficient inference at the edge. It is a fault-aware linking methodology for software managed embedded memories to efficiently map the critical code/layers onto the non-faulty segments of the memory and the non-critical fault tolerant sections in the faulty or error-prone memory segments. This is done in a way such that memory hard faults can be tolerated and voltage be lowered without degrading the accuracy (SAME inference accuracy at lower voltage/higher error rate). Our evaluation on 10 real microcontroller class chips shows that more than 175mV reduction in voltage can be achieved without any loss in accuracy for a variety of neural networks. SAME-Infer can also be considered as an efficient fault tolerance/in-field repair technique as it tolerates on average 25x (upto 350x) increase in bit error rate with minimal impact on inference accuracy.

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APA

Alam, I., & Gupta, P. (2020). SAME-Infer: Software Assisted Memory Resilience for Efficient Inference at the Edge. In ACM International Conference Proceeding Series (pp. 10–22). Association for Computing Machinery. https://doi.org/10.1145/3422575.3422774

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