Hydrogen peroxide treatment induced rectifying behavior of Aun-ZnO contact

Abstract

Conversion of the Aun-ZnO contact from Ohmic to rectifying with H2 O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H2 O2 treatment did not affect the carbon surface contamination or the EC -0.31 eV deep level, but it resulted in a significant decrease of the surface OH contamination and the formation of vacancy-type defects (Zn vacancy or vacancy cluster) close to the surface. The formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and the formation of vacancy-type defects. © 2007 American Institute of Physics.