Oxide-free bonding of III-V-based material on Silicon and nano-structuration of the hybrid waveguide for advanced optical functions

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Abstract

Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

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Pantzas, K., Itawi, A., Sagnes, I., Patriarche, G., Bourhis, E. L., Lupu, A., … Talneau, A. (2015). Oxide-free bonding of III-V-based material on Silicon and nano-structuration of the hybrid waveguide for advanced optical functions. Photonics, 2(4), 1054–1064. https://doi.org/10.3390/photonics2041054

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