Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs

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Abstract

We report the growth of zinc-blende ZnSe/MgS superlattices (SLs) on GaAs (001) substrates. The SLs were grown with metalorganic vapor phase epitaxy by selecting appropriate precursors for Mg and S. MgS naturally forms rocksalt structures, but zinc-blende MgS layers were grown. The lattice constant of MgS was estimated to be 5.59 Å. X-ray diffraction measurements show that the ZnSe/MgS SLs are grown coherently to the GaAs substrates up to the total thicknesses of ∼3000 Å. © 1996 American Institute of Physics.

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Uesugi, K., Obinata, T., Suemune, I., Kumano, H., & Nakahara, J. (1996). Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs. Applied Physics Letters, 68(6), 844–846. https://doi.org/10.1063/1.116552

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