Impact of variable interconnect length on the performance of MWCNT as VLSI interconnect for nanometer integrated circuit design

Abstract

The impact of variable interconnects length on the performance of Multiwalled Carbon nanotubes (MWCNT) as very large scale integration (VLSI) interconnect at nanometer technologies is analyzed in the paper. The parasitic of MWCNT are calculated using electrical equivalent model for different interconnect lengths. The calculated parasitic are simulated to evaluate the delay and power delay product (PDP) of MWCNT at variable interconnect length (500μm to 2000μm) using SPICE simulation tool at nanometers technologies. Further, a comparable analysis is performed for traditional copper interconnect and obtained results are compared with MWCNT as interconnects. It is shown in the results that the performance in terms of resistance, delay and PDP is better for MWCNT as compare to copper for all the interconnects lengths and technology nodes considered in this paper. As a result, MWCNTs can be considered as a substitute to copper as upcoming interconnect material for integrated circuit (IC) design for nanometer technologies.