Characterization of the Dynamic RON of 600 V GaN Switches under Operating Conditions

Abstract

High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the development of high-efficiency switching-mode power converters at high commutation frequency. Nonetheless, GaN devices are prone to charge-trapping effects that can be particularly relevant in the early-stage development of new technologies. Charge-trapping mechanisms are responsible for the degradation of the dynamic ON-resistance ( (Formula presented.) ) with respect to its static value: this degradation is typically dependent on the blocking voltage, the commutation frequency and temperature, and is responsible for the reduction of power converter efficiency. The characterization of this phenomenon is very valuable for the development of a new process to compare different technological solutions or for the final assessment of performance. This characterization cannot be made with traditional static or small signal measurements since (Formula presented.) degradation is triggered by application-like dynamic device excitations. In this paper, we propose a technique for the characterization of the dynamic (Formula presented.) of high-voltage GaN switches under real operating conditions: this technique is based on the design of a half bridge switching leg in which the DUT is operated under conditions that resemble its operation in a power converter. With this setup, the characterization of a 600 V GaN switch dynamic (Formula presented.) is performed as a function of variable blocking voltages and commutation frequency. Additionally, this technique allows the separation of thermal and trapping effects, enabling the characterization of the dynamic (Formula presented.) at different temperatures.