Controlling the stability of both the structure and velocity of domain walls in magnetic nanowires

Abstract

For magnetic nanowire devices, the precise control of both domain wall (DW) motion and pinning behaviour is essential for reliable functional performance. The domain wall velocity and wall structure are typically sensitive to the driving field or spin-polarized current, and the pinning behaviour depends on the walls' structure and chirality, leading to variability in behaviour. Here, a systematic study combining experimental measurements and micromagnetic simulations of planar nanowires with small fixed-angle structural modulations on both edges was undertaken to study the domain wall reversal regime. A phase diagram for the reversal field as a function of modulation amplitude was obtained that shows that three DW reversal regime. A range of field and modulation amplitudes were identified in which stable DW reversal occurs, where the wall velocity is constant as a function of field and the wall structure is stable, which is well suited to applications.