The Thermal Rearrangement of α-Substituted Silanes

Abstract

The thermal rearrangement of α-substituted silanes (R 3 SiCHXR′), in which there is exchange of X and R between the silicon atom and the adjacent carbon atom, has been studied. Kinetic parameters for two compounds (Me 3 SiCBrPh 2 and Ph 3 SiCHOAcPh) have been measured. Migratory aptitudes of both X and R have been examined. A mechanism involving initial migration of X to silicon, to form an "inverse ylid" [Formula: see text] is proposed.