Preparation of p-type CuSCN thin film by electrochemical method for inverted planar perovskite solar cells

Abstract

Here, we report the electrochemical deposition (ECD) of CuSCN thin film from aqueous solution at room temperature. Typically, a compact layer of CuSCN is deposited onto the indium doped tin oxide (ITO) coated substrate. The synthesized CuSCN thin film was successfully used as a Hole Transport Marterial (HTM) in perovskite solar cells and the preliminary result reveals that the synthesized CuSCN is a promising hole transporting material for inverted planar perovskite solar cells. The structural, optical and morphological investigations of the synthesized CuSCN were carried out by X-ray diffraction (XRD), UV-Vis spectroscopy (UV), scanning electron microscopy (SEM) and I-V curve respectively.