Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE

Abstract

This paper reports on high-quality InN materials prepared on a GaN template using radiofrequency metalorganic molecular beam epitaxy. We also discuss the structural and electrooptical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001]InN // [0001]GaN and (2110)InN // (2110)GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV. © 2012 Chen et al.