Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition

Abstract

Epitaxial thin films of Y-doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000-1200°C and at an oxygen pressure of 1.5×10-1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x-ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]∥MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. © 1996 American Institute of Physics.