Investigation and optical evaluation of precursors for the photodeposition of nanosized ZnS amorphous thin films

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Abstract

Thin amorphous nanostructured ZnS films have been photochemically obtained by means of direct UV radiation (X= 254 nm) of the complex Zn [(CH 3)2CHCH2OCS2]2 deposited on Si(100) and on ITO glass through the spin-coating technique. The UV photolysis of thin films of Zinc Xanthate complex results in the loss of all ligands from the coordination sphere. The binding energy values for as-deposited films in X-Ray Photoelectron Spectra were 1022.7 eV for Zn2p3 and 163-169 eV for S 2p. The as-deposited film showed a non-uniform rough surface with a root-mean-square (rms) roughness of 48.5 nm and a maximum height, Rmax, of 460.5 nm. The annealed ZnS films showed a uniform and a reasonably light but smooth surface with a rms roughness of 43.0 nm and Rmax of 274.2 nm. The optical band gap was determined and found to be 3.2 ± 0.01 eV and 3.25 ± 0.01 eV. © 2007 Sociedad Chilena de Química.

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APA

Tejos R, M., Rolón, B. G., Del Río, R., & Cabello, G. (2007). Investigation and optical evaluation of precursors for the photodeposition of nanosized ZnS amorphous thin films. Journal of the Chilean Chemical Society, 52(3), 1257–1260. https://doi.org/10.4067/S0717-97072007000300015

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