Abstract
AℓN has been used as a barrier material in large josephson junctions. The chemical and structural compatibility of AℓN with NbN make it possible to fabricate NbN/AℓN/NbN junctions by sequential reactive sputtering in a common Ar and N2 atmosphere. In a junction with an area of about 1.0×1.0 mm2, having a transition temperature of 14.5K. the measured I-V and first derivative curves yield a sum gap value of about 3.0 meV. © 1987 The Japan Society of Applied Physics.
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CITATION STYLE
Song, S. N., Jin, B. Y., Yang, H. Q., Ketterson, J. B., & Schuller, I. K. (1987). Preparation of Large Area NbN/AlN/NbN Josephson Junctions. Japanese Journal of Applied Physics, 26(S3-2), 1615–1616. https://doi.org/10.7567/JJAPS.26S3.1615
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