Preparation of PbTiO3 thin films by Liquid Source Misted Chemical Vapor Deposition (LSMCVD) method

Abstract

The ferroelectric PbTiO3 (PT) thin films were deposited on MgO(100) and Si (001) substrates by Liquid Source Mist Chemical Vapor Deposition (LSMCVD) method. The Pb (DPM)2 and Ti(iOC3H 7)4 (TTIP) were used as metal sources. Metal-organic sources were dissolved in 2-metoxyethanol. The PT thin films have (h00) and (001) preferred orientations at lower metal source concentrations on MgO(100) substrate. The epitaxial PT thin film could be prepared on MgO(100) substrate at 0.02 mol/L solution at 600°C. The epitaxial PT thin films having stoichiometric composition and smooth surfaces were prepared on MgO(100) substrates. In this study, the solution concentration is an important process parameter to fabricate epitaxial PT thin films. The PT thin films which have polycrystalline phases on Pt(111)/TiO2/SiO2/Si(001) showed about 320 of dielectric constants and 3uC/cm2 of remanent polarization with 109.54 kV/cm of coercive field.