A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation

Abstract

The growth of Gd3Ga2.7Al2.3O12:Ce and Gd3Ga2.7Al2.3O12:Ce,Mg crystals was accomplished by the laser-diode floating zone method (LDFZM) under a pressurized oxygen atmosphere. Optical, luminescence, and scintillation characterization were performed, which points to their comparable scintillation performance and lower charge trapping in the scintillation mechanism compared to commercial GAGG:Ce crystals grown by the Czochralski method. Theoretical electronic band structure calculations were performed for Gd3Ga2.7Al2.3O12, Gd3Ga5O12 and Gd3Al5O12 compositions and these are discussed in the light of the experimental results obtained.