Paraserianthes falcataria (L.) Nielsen: Ekologi, silvikultur dan produktivitas

Abstract

e employed to evaluate the quantitative impact of each trap. The trap concentration increases were only observed in devices that showed a 1 dB drop in output power and not the result of the ALT itself indicating that these traps and primarily the EC-0.57 eV trap are responsible for the output power degradation. Increases from the EC-0.57 eV level were responsible for 80% of the increased knee walkout while the EC-0.75 eV contributed only 20%. These traps are located in the drain access region, likely in the GaN buffer, and cause increased knee walkout after the application of drain voltage.