Low-voltage nanodomain writing in He-implanted lithium niobate crystals

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Abstract

A scanning force microscope tip is used to write ferroelectric domains in He-implanted single-crystal lithium niobate and subsequently probe them by piezoresponse force microscopy. Investigation of cross-sections of the samples showed that the buried implanted layer, ∼1 μm below the surface, is nonferroelectric and can thus act as a barrier to domain growth. This barrier enabled stable surface domains of <1 μm size to be written in 500 μm thick crystal substrates with voltage pulses of only 10 V applied to the tip. © 2010 American Institute of Physics.

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Lilienblum, M., Ofan, A., Hoffmann, Á., Gaathon, O., Vanamurthy, L., Bakhru, S., … Soergel, E. (2010). Low-voltage nanodomain writing in He-implanted lithium niobate crystals. Applied Physics Letters, 96(8). https://doi.org/10.1063/1.3319839

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