In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.
Gobbert, M. K., Cale, T. S., & Ringhofer, C. A. (1998). The combination of equipment scale and feature scale models for chemical vapor deposition via a homogenization technique. VLSI Design, 6(1–4), 399–403. https://doi.org/10.1155/1998/24073