InGaAs/InP and InAlAs/InP single heterostructures grown by molecular beam epitaxy and InGaAsP/InP single heterostructures grown by liquid phase epitaxy under large negative lattice mismatch conditions have been investigated in order to clarify the physical mechanisms of crack formation and propagation. It has been found that cracks generated at the epilayer-substrate interface propagate into both the epilayer and the substrate. It has been observed that cracks parallel to the  direction have a higher mobility than cracks parallel to the  direction. The previously reported cracking model, involving glide, combination and lock up of misfit dislocations, has been confirmed. © 1988.
Franzosi, P., Salviati, G., Scaffardi, M., Genova, F., Pellegrino, S., & Stano, A. (1988). Cracks in InP-based heterostructures. Journal of Crystal Growth, 88(1), 135–142. https://doi.org/10.1016/S0022-0248(98)90015-X