Gamma ray-assisted irradiation of few-layer graphene films: A Raman spectroscopy study

9Citations
Citations of this article
32Readers
Mendeley users who have this article in their library.
Get full text

Abstract

This paper represents results of a Raman spectroscopy study of gamma-irradiated few-layer graphene thin films at three different doses: 25, 50 and 110 kGy. Graphene thin films were deposited by the vacuum filtration method and then transferred onto glass substrate. Raman spectroscopy and atomic force microscopy analysis have shown that the average in-plane crystallite size Laof graphene thin films varies slightly when an irradiation dose is applied. Raman spectroscopy revealed that gamma irradiation of graphene thin films resulted in slight p-doping of the graphene thin film surface. It was found that during gamma irradiation at a dose of 110 kGy, the graphene sheets merged. As a result, the number of incorporated defects in the graphene structure was reduced (the ID/IGratio decreased with the increase in the applied dose).

Cite

CITATION STYLE

APA

Kleut, D. N., Marković, Z. M., Holclajtner Antunović, I. D., Dramićanin, M. D., Kepić, D. P., & Todorović Marković, B. M. (2014). Gamma ray-assisted irradiation of few-layer graphene films: A Raman spectroscopy study. In Physica Scripta Topical Issues (Vol. T162). IOP Publishing Ltd. https://doi.org/10.1088/0031-8949/2014/T162/014025

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free