Semiconductor diodes, transistors and integrated devices for the microwave region are discussed. The development and future state of microwave diodes are mentioned, such as receiving mixer diodes, varactor diodes, p- i- n diodes, tunnel diodes, Gunn diodes, and IMPATT diodes. Fundamental design concept and a new fabrication technique for microwave transistors are described. The fundamental circuit elements techniques used in hybrid ICs are described, as well as some of their applications, such as amplifiers, mixers and receivers.
CITATION STYLE
UCHIMARU K, WATANABE H, MURATA E, IRIE T, & MURAKAMI H. (1971). Microwave semiconductor devices. NEC Research and Development, (20), 165–187. https://doi.org/10.3169/itej1954.30.650
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