Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition

Abstract

SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (Tdep) range of 1150 - 1422 K. At Tdep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (Rdep) was 220 µm h−1 at Tdep = 1262 K.