By eliminating the costly steps of Si wafer, polycrystalline silicon (poly-Si) thin film solar cells become the very promising candidates for cost-effective photovoltaics in the future. In order to maintain the high efficiency character of crystalline silicon (c-Si) wafer-based solar cells, competitive material qualities and appropriate device structures are required for poly-Si thin film solar cells on inexpensive substrates. Low cost fabrication processes are also demanded from the point of view of industrial production. In the past few decades, a wide variety of poly-Si thin film solar cell approaches have been investigated to improve device performance and to identify suitable technology to boost poly-Si thin film solar cells towards competitive photovoltaic devices. The efficiencies of poly-Si thin film solar cells increase gradually. However, they are still much lower than that of c-Si solar cells or other compound semiconductor thin film solar cells. More efforts are needed in the future. This chapter reviews the technological and scientific developments in the field of poly-Si thin films and solar cells. After an introduction, basic knowledge involved in the fabrication of poly-Si thin films is presented in the first part. In the second part, seed layer and transfer techniques for poly-Si thin film solar cells are described. In the third part, suitable light trapping technology is discussed. In the fourth part, material characterization techniques and properties of poly-Si thin films are shown. In the final part, the developing status of poly-Si thin film solar cells is summarized.
Liu, F., & Zhou, Y. (2019). Polycrystalline silicon thin film. In Handbook of Photovoltaic Silicon (pp. 757–790). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-662-56472-1_29