Memristor logic operation gate with share contact RRAM cell

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Abstract

In this letter, we proposed a novel operation of a share contact resistive random access memory (CRRAM) structure to realize a nonvolatile latch (NV latch) with a single transistor. With a share CRRAM structure and sequential input operations, the NV latch as well as and/or functions have been successfully demonstrated. The new mixing approach of combining memory and logic in a single unit projects the possibility of new applications for VLSI circuits. © 2006 IEEE.

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Shen, W. C., Tseng, Y. H., Chih, Y. D., & Lin, C. J. (2011). Memristor logic operation gate with share contact RRAM cell. IEEE Electron Device Letters, 32(12), 1650–1652. https://doi.org/10.1109/LED.2011.2167313

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