Optical and electrical properties of the MoSe2/graphene heterostructures

Abstract

Optical and electrical properties of MoSe2 monolayer transferred to graphene/SiC substrate are studied by scanning probe microscopy and photoluminescence spectroscopy. By Kelvin probe microscopy it was measured a work function of the MoSe2 monolayer (4.3 eV) and it was revealed the n-type of doping. With the increasing of MoSe2 layers quantity the work function also increases which leads to the reducing of the Schottky barrier height between the SPM probe and the layers. Monolayer graphene quenches photoluminescence of the MoSe2 monolayer while the bilayer graphene does not perturb the photoluminescence.