High-speed low-power DCFL using planar two-dimensional electron gas FET technology

Abstract

Planar two-dimensional electron gas FETs (TEGFETs) have been shown to have ultra-high speed and low power in DCFL circuits operating at room temperature: 18·4 ps at 900 μW and 32-5 ps at 62 μW. The latter result and the simplicity of the process involved are compatible with VLSI requirements. © 1982, The Institution of Electrical Engineers. All rights reserved.