Ultrahigh dielectric constant of thin films obtained by electrostatic force microscopy and artificial neural networks

Abstract

A detailed analysis of the electrostatic interaction between an electrostatic force microscope tip and a thin film is presented. By using artificial neural networks, an equivalent semiinfinite sample has been described as an excellent approximation to characterize the whole thin film sample. A useful analytical expression has been also developed. In the case of very small thin film thicknesses (around 1 nm), the electric response of the material differs even for very high dielectric constants. This effect can be very important for thin materials where the finite size effect can be described by an ultrahigh thin film dielectric constant. © 2012 American Institute of Physics.