AlxTe1-x selector with high ovonic threshold switching performance for memory crossbar arrays

Abstract

We report the fabrication of a bidirectional selector based on threshold switching (TS) material AlxTe1-x. By modulating the composition and the thickness of the AlxTe1-x film layer, an optimized bidirectional selector with the advantages of being electroforming-free, with sufficient operating current (1 mA), satisfactory selectivity (ca. 5.9 × 103), appropriately small threshold voltage (ca. ±0.7 V), and excellent switching uniformity was fabricated. The trap-limited conduction model was employed to explain the TS characteristics of the W/AlxTe1-x/W device. The application of a high electric field to the devices is considered to induce the tunneling of the high-electric field-derived carriers from deep traps to shallow traps, switching the device to the on-state.