The meso-porous silicon (PS) has become an interesting material owing to its potential applications in many fields, including optoelectronics and photovoltaics. PS layers were grown on the front surface of the n+ emitter of n+-p mono-crystalline Silicon junction. The thickness and the porosity of the PS layer were determined by an ellipsometer, as a function of time duration of anodization, and the variation law of the PS growth kinetics is established. Single layers PS antireflection coating (ARC) achieved around 9% of effective reflectivity in the wavelength range between 400 and 1000 nm on junction n+-p solar cells. To reduce the reflectivity and improve the stability and passivation properties of PS ARC, silicon oxide layers were deposited by PECVD on PS ARC. SiOx layers of thickness of 105 nm combined with PS layer led to 3.8% effective reflectivity. Voc measurements were carried out on all the samples by suns-Voc method and showed an improvement of the quality of the passivation brought by the oxide layer. Using the experimental reflectivity results and taking into account the passivation quality of the samples, the PC1D simulations predict an enhancement of the photogenerated current exceeding 44%. © 2010 Elsevier B.V. All rights reserved.
Remache, L., Fourmond, E., Mahdjoub, A., Dupuis, J., & Lemiti, M. (2011). Design of porous silicon/PECVD SiOx antireflection coatings for silicon solar cells. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 176(1), 45–48. https://doi.org/10.1016/j.mseb.2010.08.010