Development and simulation of a structure based on CuIn1-xGaxSe2semiconductors alloys for a new generation of photovoltaic cells

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Abstract

The aim of our study is the development and simulation of thin films structure based on CuIn1-xGaxSe2semiconductors alloys to improve the conversion efficiency of solar cells. We studied and simulated the variation effect of the Gallium concentration on some physical and electrical properties (lattice parameter, strain, energy gap, refractive index, absorption coefficient and J (V) characteristic), this in order to optimize the best possible performances for solar cells. Then, we studied the influence of surface state density and temperature on solar devices characteristics. For better performance of our structure based on CuIn1-xGaxSe2, the concentration of gallium must be less than 40% and this to avoid the lattice mismatch with CdS buffer layer. We have demonstrated by simulation models the possibility for efficiency to reach 22% in the case of CuIn1-xGaxSe2thin films solar cells. © 2012 Published by Elsevier Ltd.

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Aissat, A., Fathi, M., & Vilcot, J. P. (2012). Development and simulation of a structure based on CuIn1-xGaxSe2semiconductors alloys for a new generation of photovoltaic cells. In Energy Procedia (Vol. 18, pp. 197–204). Elsevier BV. https://doi.org/10.1016/j.egypro.2012.05.031

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