Nucleation and growth study of copper thin films on different substrates and wetting layers by metal-organic chemical vapour deposition

Abstract

Chemical vapour deposition of copper thin films on different diffusion barrier/adhesion promoter layers have been studied. Copper thin films were grown in low pressure CVD reactor, using Cu(dpm)2 as precursor and argon as carrier gas. Growth rates, film adhesion to the substrate, and surface morphology were studied in detail. © 1995 Indian Academy of Sciences.