Preparation of ferroelectric (Y, Yb)MnO3 films by chemical solution process

Abstract

Ferroelectric (Y, Yb)MnO3 thin film is one of a candidate for the application to the ferroelectric memories. This paper focused the preparation of (Y, Yb) MnO3 thin films by chemical solution process. The synthesis of (Y, Yb) MnO3 thin films using alkoxy-derived solutions and the effects of crystallization conditions and compositions on the crystallographic properties have been investigated in detail. On the basis of fundamental studies, we were able to find that crystallization in Ar was essential for the better electrical properties. Additionally, the ferroelectric properties of the (Y, Yb) MnO3 thin films were investigated by measuring the electrical properties of metal/ferroelectrics/metal (MFM) and metal/ferroelectrics/insulator/semiconductor (MFIS) structures.