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Possible domain patterns are developed for (001) oriented (pseudocubic<br />indexing) epitaxial rhombohedral perovskite ferroelectric (F-R) films.<br />We assume that the films are grown above their Curie temperature<br />(T-C) in a cubic paraelectric (P-C) state, The rhombohedral distortion<br />consists of a "stretch" along one of the four [111] crystallographic<br />directions of the cubic perovskite unit cell. Domain pattern formation<br />is concurrent with the P-C-->F-R transformation on cooling from the<br />growth temperature. The domain patterns form to minimize elastic<br />energy in the film, at the energetic expense of both forming domain<br />boundaries and developing local stresses in the substrate. Eight<br />possible domains may form, half of which are related by inversion,<br />thus leading to four mechanically distinct variants. The possible<br />domain walls are determined by mechanical and charge compatibility<br />and follow closely from the analysis of Fousek and Janovec [J. Appl.<br />Phys. 40, 135 (1969)]. Domain patterns may develop with either {100}<br />or {101} boundaries. In both cases, the individual domains in the<br />patterns are energetically degenerate and thus equal width lamellar<br />patterns are predicted. When polarization is included in the analysis,<br />the {100} boundary patterns have no normal component of the net polarization,<br />whereas the {101} boundary patterns correspond to the fully poled<br />state. We report on experimental observation of {100} domain patterns<br />in epitaxial PbZr0.80Ti0.20O3 and PbZr0.65Ti0.35O3 films. (C) 1998<br />American Institute of Physics.




Streiffer, S. K., Parker, C. B., Romanov, A. E., Lefevre, M. J., Zhao, L., Speck, J. S., … Bai, G. R. (1998). Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments. Journal of Applied Physics, 83(5), 2742–2753. https://doi.org/10.1063/1.366632

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