A compact W-band reflection-type phase shifter with extremely low insertion loss variation using 0.13 μm CMOS technology

Abstract

This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 μm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads. Lumped-distributed element transmission line is introduced in the 90° hybrid coupler to reduce the chip size. Series inductor-capacitor (LC) resonators are used as the reflective loads and parallel inductors are deployed to reduce insertion loss variation. By cascading two-stage RTPS, 90° phase shifting range and 10.5 dB insertion loss with 1 dB variations from 80 GHz to 90 GHz are achieved. An impressive 0.1 dB variation is obtained at 86 GHz.