Rydberg energy levels and quantum defects of B II, Ge II, Si II of subgroups III and IV

0Citations
Citations of this article
N/AReaders
Mendeley users who have this article in their library.
Get full text

Abstract

Theoretical computations of Rydberg energy levels series and atomic lifetimes for singly ionized boron (B II), silicon (Si II), and germanium (Ge II) have been performed. In the theoretical computation weakest bound electron potential model theory (WBEPMT) is employed. Regularities of changes in quantum defects for the following Rydberg states series: 2sns(1S0), 2snp (3Po0), 2snf(3Fo2,3Fo3,3Fo4), 2snf(1Fo3) of B II; 3s2ns(2S1/2), 3s2nd(2D3/2,5/2), 3s2nf(2 o F5/2,7/2), 3s2ng(2G7/2,9/2) of Si II; and 4s2nf(2Fo5/2), 4s2nf(2Fo7/2), 4s2ng(2G7/2,9/2) of Ge II, up to n = 50 are presented. The atomic lifetimes of the following series: 1s22sns(1S0), 1s22snp(3Po1), 1s22snd (1D2) of B II; 3s2ns(2S1/2), 3s2nf(2 o F5/2,7/2) of Si II; and 4s2ns(2S1/2) of Ge II are predicted with good accuracy. Some high-lying Rydberg energy levels and atomic lifetimes have been presented for the first time. The series for which Rydberg energy levels are computed in this work are unperturbed series.

Cite

CITATION STYLE

APA

Ahmed, E., Raza, S., Hameed, M. N., Farooq, M., & Akbar, J. (2020). Rydberg energy levels and quantum defects of B II, Ge II, Si II of subgroups III and IV. Canadian Journal of Physics, 98(3), 274–286. https://doi.org/10.1139/cjp-2018-0821

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free