Investigation of Short Channel Effects in SOI MOSFET with 20 nm Channel Length by a β-Ga 2 O 3 Layer

Abstract

This paper presented a fully depleted silicon on insulator (FD-SOI) MOSFET in nano scale size with deployment the quasi two dimensional β -Ga 2 O 3 material to improvement electrical properties. The main idea of the proposed structure is embedding a layer of the β -Ga 2 O 3 in the drain region. Due to the β -Ga 2 O 3 material features, the electric field distribution near the drain and gate side will be change and peak of the electric field of the proposed structure is diminish. The embedded layer of the β -Ga 2 O 3 material in our work has an important effects on the electrical and thermal characteristics. In this paper, characteristics of the proposed structure is compared with the prevalent SOI and improvement of characteristics in our work are shown. The features such as the electric field, the potential distribution, the sub-threshold slope, the kink effect, the self-heating effect, punch through effect and DIBL effect are investigated and compared with prevalent SOI.