In situ control of oxygen fugacity at high temperature and high pressure

Abstract

A new technique to control oxygen fugacity in situ under high-temperature and highpressure conditions has been developed. In this method a special sample assembly constructed of a reference buffer, yttrium-stabilized zirconia (YSZ) disks, a sample, and an oxygen reservoir was used. Through a driving voltage between the sample and the oxygen reservoir, oxygen was moved from the reservoir into the sample, or from the sample into the reservoir. The rate of oxygen transport was adjusted by regulating and the thickness of the YSZ disk