Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated and integrated to manufacture scale-up donor-based quantum computers. 31PF2 molecule implants are used to triple the placement certainty compared to 31P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as 123Sb and 209Bi, which represent high-dimensional qudits for quantum information processing, while Sb2 molecules enable deterministic formation of closely-spaced qudits. The deterministic formation of regular arrays of donor atoms with 300 nm spacing is demonstrated, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.
CITATION STYLE
Jakob, A. M., Robson, S. G., Firgau, H. R., Mourik, V., Schmitt, V., Holmes, D., … Jamieson, D. N. (2024). Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon. Advanced Materials. https://doi.org/10.1002/adma.202405006
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