Three-dimensional observation of dislocations by electron tomography in a silicon crystal

Abstract

Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending. © 2008 The Japan Institute of Metals.