Reliability of 1.5 × 1.5 mm2 β-Ga2O3 Power Diodes and Application in DC–DC Converter

Abstract

High breakdown voltage and exceptional robustness make β-Ga2O3 power devices a key focus of current research. Despite growing attention to the reliability of β-Ga2O3 devices, systematic studies are still limited, and comparative analyses between different structures remain unreported. This study presents a comparative analysis of β-Ga2O3 Schottky barrier diodes (SBD) and p-NiO/β-Ga2O3 heterojunction diodes (HJD) with mesa termination through comprehensive reliability test, including high-temperature storage, reverse recovery, surge current, and rectification characteristics. The results indicate that the SBDs outperform in high-frequency rectification performance up to 1 MHz, whereas the HJDs demonstrate superior high-temperature stability of 250 °C. The surge current densities of the SBD and HJD devices reach 0.88 and 0.78 kA cm−2, respectively, representing the highest values reported to date. In particular, the efficiency of both the SBD and HJD devices exceeds 95% in circuit application, with SBD excelling in high-frequency mode and HJD performing optimally in high-temperature conditions. This study highlights the high reliability of β-Ga2O3 devices and provides valuable insights for the application under varied operating conditions.