Investigation of the radiation resistance of nitride ceramics during irradiation with low-energy

Abstract

The paper presents the results of a study of the radiation resistance of ceramic materials based on aluminum nitride. The irradiation was carried out by C2+ ions with an energy of 40 keV with a fluence from 1014 to 1015 ion cm-2. It is established that as a result of irradiation of the near-surface layer, formation of an impurity phase of Al4C3 is observed, which leads to an increase in parameters of the crystal lattice, which indicates the implantation of C2+ ions and the formation of the implantation phase in the structure. In this case, an increase in contributions of the impurity phases leads to a decrease in the intensity of diffraction peaks, as well as their asymmetry, which is caused by an increase in microstresses and deformations in the lattice. The decrease in hardness and strength characteristics can be explained by the formation of regions of structure disorder in the near-surface layer, as well as the increase in material porosity due to the change in density.